Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

China SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology supplier

Large Image :  SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: SGP02N120

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8300pcs
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Detailed Product Description
Collector-emitter Voltage: 1200 V DC Collector Current: 6.2 A
Pulsed Collector Current: 9.6 A Gate-emitter Voltage: ±20 V
Power Dissipation: 62 W Operating Junction And Storage Temperature: -55...+150°C
High Light:

power mosfet ic

,

multi emitter transistor

 

SGP02N120, SGB02N120, SGD02N120

 

Fast S-IGBT in NPT-technology

 

 

• 40% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

  - Motor controls

  - Inverter

  - SMPS

• NPT-Technology offers:

  - very tight parameter distribution

  - high ruggedness, temperature stable behaviour

  - parallel switching capability

 

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

 

Maximum Ratings

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V

DC collector current

TC = 25°C

TC = 100°C

IC

 

6.2

2.8

A
Pulsed collector current, tp limited by Tjmax ICpuls 9.6 A
Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C   9.6 A
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C EAS 10 mJ
Short circuit withstand time1) VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs
Power dissipation TC = 25°C Ptot 62 W
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s   260 °C

 

 

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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