Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
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Drain-Source Voltage: | 30 V | Gate-Source Voltage: | ±20 V |
---|---|---|---|
Drain Current: | 21 A | Operating And Storage Junction Temperature Range: | –55 To +125 °C |
Thermal Resistance, Junction-to-Ambien: | 50 °C/W | ||
High Light: | power mosfet ic,silicon power transistors |
General Description
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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