Anterwell Technology Ltd.
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Drain-Source Voltage: | 20 V | Gate-Source Voltage: | ± 12 V |
---|---|---|---|
Maximum Power Dissipation: | 0.35 W | Operating And Storage Junction Temperature Range: | –55 To +150 °C |
Thermal Resistance, Junction-to-Ambient: | 357 °C/W | ||
High Light: | power mosfet ic,multi emitter transistor |
FDV305N
20V N-Channel PowerTrench MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
Applications
• Load switch
• Battery protection
• Power management
Features
• 0.9 A, 20 V
RDS(ON) = 220 mΩ @ VGS = 4.5 V
RDS(ON) = 300 mΩ @ VGS = 2.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
Absolute Maximum Ratings
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 20 | V |
VGSS | Gate-Source Voltage | ± 12 | V |
ID |
Drain Current – Continuous 0.9 A – Pulsed |
0.9 2 |
A |
PD | Maximum Power Dissipation | 0.35 | W |
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