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STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

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STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

: Large Image : STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

Product Details:

Place of Origin:	China
Brand Name:	SANYO
Certification:	Original Factory Pack
Model Number:	STGIPS20K60

Payment & Shipping Terms:

Minimum Order Quantity:	25pcs
Price:	Negotiation
Packaging Details:	DIP-16
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	28000PCS

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Detailed Product Description

Temperature Range:	–55°C To +150°C	Payment Term:	T/T, Paypal, Western Union
Voltage:	10V	Current:	5A
Package:	SDIP-25	Factory Package:	TUBE
High Light:	thyristor diode module , low voltage power mosfet

STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

Features
■ 17 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down / pull up resistors
■ Internal bootstrap diode
■ Interlocking function
■ VCE(sat) negative temperature coefficient
■ Short-circuit rugged IGBTs
■ Undervoltage lockout
■ Smart shutdown function
■ Comparator for fault protection against over temperature and overcurrent
■ DBC fully isolated package
■ Isolation rating of 2500 Vrms/min

Applications
■ 3-phase inverters for motor drives
■ Home appliances, such as washing machines, refrigerators, air conditioners

Description
The STGIPS20K60 intelligent power module provides a compact, high performance AC motor drive for a simple and rugged design. It mainly targets low power inverters for applications such as home appliances and air conditioners. It combines ST proprietary control ICs with the most advanced short circuit rugged IGBT system

ABSOLUTE MAXIMUM RATINGS(1)

VPN Supply voltage applied between P - NU, NV, NW 450 V

VPN(surge) Supply voltage (surge) applied between P - NU, NV, NW 500 V VCES Collector emitter voltage (VIN(1) = 0)

3. Pulse width limited by max junction temperature

Each IGBT pulsed collector current 40 A

PTOT Each IGBT total dissipation at TC = 25°C

42 W tscw Short circuit withstand time,

VCE = 0.5 V(BR)CES TJ = 125 °C, VCC = Vboot= 15 V, VIN (1)= 0 ÷ 5 V 5 µs

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