Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home ProductsMosfet Power Module

CM200DY-24H Mosfet Power Module thyristor switching Lgbt Power Module

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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CM200DY-24H Mosfet Power Module thyristor switching Lgbt Power Module

China CM200DY-24H Mosfet Power Module thyristor switching Lgbt Power Module supplier

Large Image :  CM200DY-24H Mosfet Power Module thyristor switching Lgbt Power Module

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: CM200DY-24H

Payment & Shipping Terms:

Minimum Order Quantity: 5pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 2300pcs
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Detailed Product Description
Junction Temperature: –40 To 150 °C Storage Temperature: –40 To 125 °C
Collector-Emitter Voltage (G-E SHORT): 1200 Volts Gate-Emitter Voltage (C-E SHORT): ±20 Volts
Peak Emitter Current: 400 A Maximum Collector Dissipation: 1500 W
High Light:

thyristor diode module

,

hybrid inverter circuit

 

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SP202ECT 3700 SIPEX 13+ SOP-16
ZTX614 3700 ZETEX 15+ TO-92
1N4744A 3710 ST 16+ DO-41
SN74HC273N 3710 TI 16+ DIP-20
FQA19N60 3711 FAIRCHILD 14+ TO-247
TDA7056B 3711 PHILIPS 14+ ZIP
XR2206 3720 EXAR 14+ DIP16
CC2530F256RHAR 3750 TI 16+ QFN40
DTDG14GP 3750 ROHM 16+ SOT89
RT9214PS 3750 RICHTEK 13+ SOP-8
SMAJ58A 3750 VISHAY 15+ SMA
NCP1653ADR2G 3754 ON 16+ SOP-8
DPA6111 3771 IR 16+ DIP4
TLP281-1 3771 TOSHIBA 14+ SOP4
B1100-13-F 3772 DIODES 14+ SMA
SN74LVC1G97DCKR 3772 TI 14+ SC70-6
FQP19N20 3777 FAIRCHILD 16+ TO220
LTC4412 3778 LINEAR 16+ SOT23-6
MAX4172EUA+T 3778 MAXIN 13+ MSOP8
TLP621-2GB 3778 TOSHIBA 15+ DIP8
MIC841LBC5 3780 MICREL 16+ SC70-5
HCF4538BEY 3785 ST 16+ DIP
MBR1645G 3788 ON 14+ TO-220
HD01 3798 DIODES 14+ SOP-4
AP70T03GH 3800 APEC 14+ TO-252

 

 

MITSUBISHI IGBT MODULES CM200DY-24H

HIGH POWER SWITCHING USE INSULATED TYPE

 

Description:

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

 

Features: CM200DY-24H Mosfet Power Module thyristor switching Lgbt Power Module

  • Low Drive Power
  • Low VCE(sat)
  • Discrete Super-Fast Recovery Free-Wheel Diode
  • High Frequency Operation
  • Isolated Baseplate for Easy Heat Sinking

Applications:

  • AC Motor Control
  • Motion/Servo Control
  • UPS
  • Welding Power Supplies

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100DY-24H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC 200 Amperes
Peak Collector Current ICM 400* Amperes
Emitter Current** (TC = 25°C) IE 200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 1500 Watts
Mounting Torque, M6 Main Terminal - 1.96 ~ 2.94 N · m
Mounting Torque, M6 Mounting - 1.96 ~ 2.94 N · m
Weight - 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

 

Outline Drawing and Circuit Diagram

CM200DY-24H Mosfet Power Module thyristor switching Lgbt Power Module

 

CM200DY-24H Mosfet Power Module thyristor switching Lgbt Power Module

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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