Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL low power mosfet transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL low power mosfet transistor

China 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL low power mosfet transistor supplier

Large Image :  256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL low power mosfet transistor

Product Details:

Place of Origin: original factory
Brand Name: SAMSUNG
Certification: new & original
Model Number: K4S561632D-TC75

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 20000pcs
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Detailed Product Description
VIN, V OUT: -1.0 ~ 4.6V TSTG: -55 ~ +150 °C
P D: 1 W IOS: 50mA
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K4S561632D-TC75 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
 
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
               -. CAS latency (2 & 3)
               -. Burst length (1, 2, 4, 8 & Full page)
               -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
GENERAL DESCRIPTION
The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL low power mosfet transistor
ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, V OUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation P D 1 W
Short circuit current IOS 50 mA

DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -0 to 70°C)

Parameter Symbol Min Typ Max Unit Note
Supply voltage VDD , VDDQ 3.0 3.3 3.6 V 4
Input logic high voltage VIH 2.0 3.0 V DD+0.3 V 1
Input logic low voltage VIL -0.3 0 0.8 V 2
Output logic high voltage VOH 2.4 - - V IOH = -2mA
Output logic low voltage VOL - - 0.4 V IOL = 2mA
Input leakage current ILI -10 - 10 uA 3

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL low power mosfet transistor
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL low power mosfet transistor
 
 
 
 
 
 
 
 
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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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