Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain-source Voltage (VGS = 0): | 60 V | Gate- Source Voltage: | ± 20 V |
|---|---|---|---|
| Drain Current (pulsed): | 240 A | Total Dissipation At TC = 25°C: | 110 W |
| Derating Factor: | 0.73 W/°C | Peak Diode Recovery Voltage Slope: | 10 V/ns |
| High Light: | multi emitter transistor,silicon power transistors |
||
STD65NF06
STP65NF06
N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET
General features
| Type | VDSS | RDS(on) | ID |
|---|---|---|---|
| STD65NF06 | 60V | <14mΩ | 60A |
| STP65NF06 | 60V | <14mΩ | 60A |
■ Standard level gate drive
■ 100% avalanche tested
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
■ Switching application
Absolute maximum ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain-source voltage (VGS = 0) | 60 | V |
| VGS | Gate- source voltage | ± 20 | V |
| ID | Drain current (continuous) at TC = 25°C | 60 | A |
| ID | Drain current (continuous) at TC = 100°C | 42 | A |
| IDM(1) | Drain current (pulsed) | 240 | A |
| Ptot | Total dissipation at TC = 25°C | 110 | W |
| Derating Factor | 0.73 | W/°C | |
| dv/dt (2) | Peak diode recovery voltage slope | 10 | V/ns |
| EAS (3) | Single pulse avalanche energy | 390 | mJ |
| Tstg | Storage temperature | -55 to 175 | °C |
| Tj | Max. operating junction temperature |
1. Pulse width limited by safe operating area.
2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
3. Starting Tj = 25 °C, ID = 30A, VDD = 40V
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